(Photo= Yonhap news)

[Alpha Biz= Reporter Kim Sangjin] Samsung Electronics is set to establish a 6th-generation DRAM production line at its Pyeongtaek Plant 4 (P4). The 6th-generation DRAM, known as '1c,' is a next-generation DRAM in the early 10-nanometer (nm) range. This move follows recent investments in NAND flash memory at the same plant, marking the beginning of Samsung's expansion to meet the increasing demand for memory.

As of August 11, it has been confirmed that Samsung is preparing to introduce DRAM processing equipment at P4, with plans to commence operations in June next year. The plant will produce 6th-generation 1c DRAM. DRAM generations are divided based on the width of circuit lines, with the industry referring to them as '1a→1b→1c.'

Previously, DRAM generations were classified by specific circuit widths, such as 20nm or 18nm, but as the technology entered the 10nm range, further subdivision became necessary due to the challenges of miniaturization.

The 1c DRAM is not yet commercially available globally, but both Samsung and SK Hynix are preparing for mass production. Samsung plans to start producing 1c DRAM by the end of this year, signaling its commitment to advancing next-generation DRAM production and shipping.

 

 

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