[Alpha Biz=(Chicago) Reporter Kim Jisun] Samsung Electronics announced early next year that it will mass-produce 300-layer (9th generation) NAND flash for the first time in the world.

Ahead of the technology briefing session 'Samsung Memory Tech Day' scheduled for the 20th, the timing of mass production is specified. Samsung plans to develop 1,000-layer V-NAND by 2030.

Unlike DRAM, NAND is a memory in which data is stored even when there is no power. The higher the number of layers of NAND, the higher the capacity can be implemented in the same area, which is a measure of technology.

Earlier in August, SK Hynix unveiled the world's first 321-layer NAND at the US "Flash Memory Summit 2023," sparking competition in the 300-layer era in earnest.

Unlike SK Hynix, Samsung Electronics adopts a double stack structure that stacks only two stacks even at higher floors of 300 layers or higher. Because only two stacks are attached, the unit process is relatively small. This saves time and money relatively.

 

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