[Alpha Biz=(Chicago) Reporter Kim Jisun] Samsung Electronics announced that it will develop 5-nano next-generation built-in memory (eMRAM), which will be installed in automatic electronic equipment, for the first time in the industry by 2027.

Samsung Electronics held the 'Samsung Foundry Forum 2023' in Munich, Germany on the 19th (local time) and announced its foundry strategy for cutting-edge process roadmaps and battlefields.

Samsung Electronics said it will complete preparations to mass-produce state-of-the-art 2-nano electric device solutions by 2026 and expand its 8-inch BCD process portfolio. The BCD process is an implementation of analog and digital signal control and high-voltage management transistors on a single chip and is mainly used for power semiconductor production.

In addition, it announced that it will develop the industry's first 5-nano next-generation embedded mamoly (eMRAM). It plans to expand its eMRAM portfolio by developing 5-nano in 2027 through 8-nano in 2026. For 8-nano eMRAM, integration is expected to increase by 30% and speed by 33% compared to the previous 14-nano.

eMRAM is a next-generation memory for battlefields that can operate reliably at high temperatures based on fast reading and writing speed. In 2019, Samsung Electronics mass-produced the first 28-nano process-based eMRAM product in the industry. We are currently developing a pinpet process-based 14-nano eMRAM with the aim of completing it in 2024.

 

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