[Alpha Biz=(Chicago) Reporter Kim Jisun] SK Hynix will push for a process change at its Wuxi plant, breaking through U.S. regulations on ultra-UV (EUV) semiconductors in China. It is believed that the company has started to change the process by using all methods available to cope with the recovery of the DRAM market.

According to Seoul Economic Daily, SK Hynix plans to convert the 'C2' fab, which is part of its Wuxi plant in China, into a 10nm (nanometer/1 billionth of 1m) early fourth-generation (1a) DRAM process by the end of this year.

The Wuxi plant is a key production base for the company, which makes about 40% of SK Hynix's total DRAM. Currently, it manufactures second-generation (1y) and third-generation (1z) DRAMs in the late 10-nano class, which belong to the older (legacy) family.

Regarding the process conversion of the Wuxi plant, SK Hynix said, "We cannot confirm the company's detailed plan to operate the plant."

 

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