Samsung Electronics (Photo = Samsung Electronics)

 

[Alpha Biz= Paul Lee] A former researcher accused of leaking key semiconductor technology from Samsung Electronics to China has been sentenced to seven years in prison.

The Criminal Division 28 of the Seoul Central District Court, presided over by Judge Han Dae-kyun, on April 22 handed down a seven-year prison sentence to a 56-year-old defendant, identified by his surname Jeon, who had been detained and indicted on charges including violations of the Industrial Technology Protection Act.

Jeon was indicted in May last year on charges of leaking Samsung Electronics’ DRAM semiconductor process technology while moving to Chinese chipmaker CXMT, in collusion with a former Samsung Electronics executive identified as Kim.

The leaked technology is reported to be Samsung’s cutting-edge 10-nanometer-class DRAM process, developed as the world’s first of its kind with an investment of approximately KRW 1.6 trillion.

Investigators found that Jeon received a total of KRW 2.9 billion over six years from CXMT in exchange for transferring the technology, including a KRW 300 million signing incentive and stock options worth KRW 300 million.

The court found Jeon guilty on all counts, noting that the case involved the leakage of core national technology and deliberate collusion. “The crime inflicted significant damage not only on the company but also on the Republic of Korea, making severe punishment inevitable,” the court stated.

 

 

 

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